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参数资料
| 型号： | 2N5038 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/4页 |
| 文件大小： | 124K |
| 代理商： | 2N5038 |
2N5038 2N5039
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N5038
2N5039
VCEO(sus)
90
75
—
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
2N5038
(VCE = 110 Vdc, VBE(off) = 1.5 V)
2N5039
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5038
(VCE = 85 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5039
ICEX
—
50
10
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
2N5038
2N5039
(VEB = 7 Vdc, IC = 0)
Both
IEBO
—
5
15
50
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
2N5038
(IC = 10 Adc, VCE = 5 Vdc)
2N5039
hFE
20
100
—
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
—
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
—
3.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
|hfe|
12
—
—
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
tr
—
0.5
s
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
2N5038
ts
—
1.5
s
Fall Time
(IC = 10 Adc, IB1 = IB2 = 1 Adc)
2N5039
tf
—
0.5
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300, s, Duty Cycle v 2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
2
0.1
1
10
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
70
1
I C
,COLLECT
OR
CURRENT
(AMPS)
dc
50
20
10
0.5
0.2
2
3
5
7
20
30
50
TC = 25°C
2N5039
2N5038
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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| 2N5038 | 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5039 | 20 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5053 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 2N5058 | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5058 | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5038 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N5038/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Silicon Transistors |
| 2N5038_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Transistors |
| 2N5038_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Transistors 20 AMPERE POWER TRANSISTORS 90 VOLTS - 140 WATTS |
| 2N5038G | 功能描述:两极晶体管 - BJT 20A 90V 140W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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