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参数资料
| 型号： | 2N5058 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 15K |
| 代理商： | 2N5058 |
2N5058
NPN EPITAXIAL PLANAR
BIPOLAR TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
CECC SCREENING OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
General Purpose Amplifier
High Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VCBO
Collector – Base Voltage (IE = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Collector Current
PD
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
TJ , TSTG
Operating and Storage Junction Temperature Range
300V
7V
150mA
1.0W
6.67mW / °C
5.0W
33.3mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 (TO-205AD) PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5530
Issue 1
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| 2N5058 | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5059 | 功能描述:两极晶体管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Sensitive Gate Silicon Controlled Rectifiers |
| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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