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参数资料
| 型号： | 2N5058 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 15K |
| 代理商： | 2N5058 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N5058
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ft
Transistion Frequency 1
Cob
Output Capacitance
Cib
Input Capacitance
30
160
10
75
VCE = 25V
IC = 10mA
f = 20MHz
VCB = 10V
IE = 0
f = 1MHz
VBE = 0.5V
IC = 0
f = 1MHz
MHz
pF
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
300
7.0
0.05
20
10
1.0
0.85
0.82
10
35
150
10
35
IC = 30mA
IB = 0
IC = 100AIE = 0
IE = 100AIC = 0
VCB = 100V
IE = 0
TA = +125°C
VBE = 5V
IC = 0
IC = 30mA
IB = 3mA
IC = 30mA
IB = 3mA
IC = 30mA
VCE = 25V
IC = 5mA
VCE = 25V
IC = 30mA
VCE = 25V
TA = -55°C
IC = 100mA
VCE = 25V
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
VBE(on)*
Base – Emitter On Voltage
hFE*
DC Current Gain
V
A
nA
V
—
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
* Pulse Test: tp ≤ 300ms, d ≤ 2%.
1) ft is defined as the frequency at which |hfe| extrapolates to untity.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Min.
Typ.
Max.
Unit
RθJC
Thermal Resistance Junction To Case
RθJA
Thermal Resistance Junction To Ambient
30
150
°C / W
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Document Number 5530
Issue 1
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| 2N5059 | 功能描述:两极晶体管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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