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参数资料
| 型号： | 2N5058 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 231K |
| 代理商： | 2N5058 |
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2N5058 Information
Category Transistors
2N5058 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 300
V(BR)CBO (V) : 300
I(C) Max. (A) : 150m
Absolute Max. Power Diss. (W) : 1.0
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 50nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 35
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 30m
@V(CE) (V) (Test Condition) : 25
f(T) Min. (Hz) Transition Freq : 30M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-5
Mounting Style : T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5059 | 功能描述:两极晶体管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Sensitive Gate Silicon Controlled Rectifiers |
| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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