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参数资料
| 型号： | 2N5087RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 151K |
| 代理商： | 2N5087RLRA |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1
Publication Order Number:
2N5087/D
2N5087
Preferred Device
Amplifier Transistor
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
50
Vdc
CollectorBase Voltage
VCBO
50
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
Collector Current Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
200
°C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N5087
TO92
5000 Units/Box
2N5087G
TO92
(PbFree)
5000 Units/Box
3 COLLECTOR
2
BASE
1 EMITTER
2N5087RLRA
TO92
2000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2N5087RLRAG
TO92
(PbFree)
2000/Tape & Reel
3
2
1
TO92 (TO226)
CASE 29
STYLE 1
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
MARKING DIAGRAM
2N
5087
AYWW
G
(Note: Microdot may be in either location)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5087RLRAG | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TAR | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TF | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TF_Q | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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