- 您现在的位置：买卖IC网 > PDF目录49855 > 2N5087RLRA (ON SEMICONDUCTOR) 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2N5087RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 151K |
| 代理商： | 2N5087RLRA |
2N5087
http://onsemi.com
6
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) w RqJA
TJ(pk) TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19
Figure 18. ActiveRegion Safe Operating Area
TJ, JUNCTION TEMPERATURE (°C)
104
40
I C
,COLLECTOR
CURRENT
(nA)
Figure 19. Typical Collector Leakage Current
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
400
2.0
I C
,COLLECTOR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 19. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
17 by the steady state value RqJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
The safe operating area curves indicate ICVCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk)
may be calculated from the data in Figure 17. At high case
or ambient temperatures, thermal limitations will reduce the
power than can be handled to values less than the limitations
imposed by second breakdown.
102
101
100
101
102
103
20
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25°C
1.0 s
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0 10
20
40
TJ = 150°C
100 ms
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5087T93 | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089 | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5090 | 400 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-210AB |
| 2N5095.MODR1 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5087RLRAG | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TAR | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TF | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5087TF_Q | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。