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参数资料
| 型号： | 2N5192LEADFREE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | 2N5192LEADFREE |
Power Transistors
TO-126 Case
www.centr alsemi.com
Shaded areas indicate Darlington.
TYPE NO.
IC
PD
BVCBO
BVCEO
hFE
@ IC VCE(SAT) @ IC
fT
(A)
(W)
(V)
(mA)
(V)
(A)
(MHz)
NPN
PNP
MAX
MIN
MAX
MIN
2N4921
2N4918
1.0
30
40
30
150
500
0.6
1.0
3.0
2N4922
2N4919
1.0
30
60
30
150
500
0.6
1.0
3.0
2N4923
2N4920
1.0
30
80
30
150
500
0.6
1.0
3.0
2N5190
2N5193
4.0
40
25
100
1,500
0.6
1.5
2.0
2N5191
2N5194
4.0
40
60
25
100
1,500
0.6
1.5
2.0
2N5192
2N5195
4.0
40
80
20
80
1,500
0.6
1.5
2.0
2N5655
0.5
20
275
250
30
250
100
1.0
0.1
10
2N5656
0.5
20
325
300
30
250
100
1.0
0.1
10
2N5657
0.5
20
375
350
30
250
100
1.0
0.1
10
2N6037
2N6034
4.0
40
750
15,000
2,000
2.0
25
2N6038
2N6035
4.0
40
60
750
15,000
2,000
2.0
25
2N6039
2N6036
4.0
40
80
750
15,000
2,000
2.0
25
BD135
BD136
1.5
12.5
45
63
250
150
0.5
- -
BD137
BD138
1.5
12.5
60
63
250
150
0.5
- -
BD139
BD140
1.5
12.5
100
80
63
250
150
0.5
- -
BD175
BD176
3.0
30
45
40
- -
150
0.8
1.0
3.0
BD177
BD178
3.0
30
60
40
- -
150
0.8
1.0
3.0
BD179
BD180
3.0
30
80
40
- -
150
0.8
1.0
3.0
BD233
BD234
2.0
25
45
40
- -
150
0.6
1.0
3.0
BD235
BD236
2.0
25
60
40
- -
150
0.6
1.0
3.0
BD237
BD238
2.0
25
80
40
- -
150
0.6
1.0
3.0
BD433
BD434
4.0
36
22
40
- -
10
0.5
2.0
3.0
BD435
BD436
4.0
36
32
40
- -
10
0.5
2.0
3.0
BD437
BD438
4.0
36
45
30
- -
10
0.6
2.0
3.0
BD439
BD440
4.0
36
60
20
- -
10
0.8
2.0
3.0
BD441
BD442
4.0
36
80
15
- -
10
0.8
2.0
3.0
BD675
BD676
4.0
40
45
750
- -
1.5
2.5
1.5
1.0
BD675A
BD676A
4.0
40
45
750
- -
2.0
2.8
2.0
1.0
BD677
BD678
4.0
40
60
750
- -
1.5
2.5
1.5
1.0
BD677A
BD678A
4.0
40
60
750
- -
2.0
2.8
2.0
1.0
BD679
BD680
4.0
40
80
750
- -
1.5
2.5
1.5
1.0
BD679A
BD680A
4.0
40
80
750
- -
2.0
2.8
2.0
1.0
BD681
BD682
4.0
40
100
750
- -
1.5
2.5
1.5
1.0
BD683
BD684
4.0
40
120
750
- -
1.5
2.5
1.5
1.0
BF469
BF470
0.05
1.25
250
50
- -
0.025
0.6
0.03
60
BF471
BF472
0.05
1.25
300
50
- -
0.025
0.6
0.03
60
Top View
Bottom View
(6-December 2004)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5194LEADFREE | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2N4922LEADFREE | 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N4918LEADFREE | 1 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2N4923LEADFREE | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6036LEADFREE | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5192R | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件状态:生命周期结束 标准包装:1,000 |
| 2N5193 | 制造商:SPC Multicomp 功能描述:TRANSISTORPNP1A40VTO126 制造商:SPC Multicomp 功能描述:TRANSISTOR,PNP,1A,40V,TO126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:40W; DC Collector Current:1A; DC Current Gain hFE:100; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N5193 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -40V 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -40V |
| 2N5193_09 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:PNP SILICON POWER TRANSISTORS |
| 2N5194 | 功能描述:两极晶体管 - BJT 4A 60V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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