参数资料
型号: 2N5320
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 2000 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封装: HERMETIC SEALED, METAL, TO-39, 3 PIN
文件页数: 1/3页
文件大小: 116K
代理商: 2N5320
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
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Document Number 8582
Issue 1
Page 1 of 3
2N5320
Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A)
Hermetic TO-39 Metal package.
Ideally Suited For Medium Power Amplifier And
Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
75V
VEBO
Emitter – Base Voltage
7V
IC
Continuous Collector Current
2A
IB
Base Current
1.0A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
PD
Total Power Dissipation at
TC = 25°C
7W
Derate Above 25°C
40mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
175
°C/W
RθJC
Thermal Resistance, Junction To Case
25
°C/W
相关PDF资料
PDF描述
2N5321 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5321 2 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-5
2N5321 Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5321 2 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-5
2N5322 2 A, 75 V, PNP, Si, POWER TRANSISTOR, TO-5
相关代理商/技术参数
参数描述
2N5320 制造商:SPC Multicomp 功能描述:Bipolar Transistor
2N5320_12 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS
2N5320MC 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39
2N5321 功能描述:两极晶体管 - BJT TO-39 NPN GEN PUR SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5322 功能描述:两极晶体管 - BJT PNP 75V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2