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| 型号： | 2N5320 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 116K |
| 代理商： | 2N5320 |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
75
V
VCE = 100V
VBE = -1.5V
100
A
VCE = 70V
VBE = -1.5V
ICEX
Collector Cut-Off Current
TA = 150°C
5
mA
IEBO
Emitter Cut-Off Current
VEB = 7V
IC = 0
100
A
IC = 500mA
VCE = 4V
30
130
hFE
(1)
Forward-current transfer
ratio
IC = 1.0A
VCE = 2V
10
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 500mA
IB = 50mA
0.5
VBE(on)
(1)
Base-Emitter Voltage
IC = 500mA
VCE = 4V
1.1
V
DYNAMIC CHARACTERISTICS
IC = 50mA
VCE = 4V
| hfe |
Small signal forward-current
transfer ratio
f = 10MHz
5
IC = 500mA
VCC = 30V
ton
Turn-On Time
IB1 = 50mA
80
IC = 500mA
VCC = 30V
toff
Turn-Off Time
IB1 = - IB2 = 50mA
800
ns
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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| 2N5322 | 功能描述:两极晶体管 - BJT PNP 75V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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