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参数资料
| 型号： | 2N5320X |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | METAL, TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 59K |
| 代理商： | 2N5320X |
PIN CONFIGURATION
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
SMALL SIGNAL SILICON NPN
TRANSISTOR
FEATURES
SILICON NPN TRANSISTOR
METAL CASE (JEDEC TO-39)
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
SUITABLE FOR HIGH VOLTAGE MEDIUM
POWER APPLICATIONS
TO-39 (TO-205AD) CASE
MECHANICAL DATA
Dimensions in mm (inches)
2N5320X
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4046
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector-Base Voltage (IE = 0V)
100V
VCEV
Collector-Base Voltage (VBE = 1.5V)
100V
VCEO
Collector-Base Voltage (IB = 0V)
75V
VEBO
Emitter Base Voltage (IC = 0V)
6V
IC
Collector Current
1.2A
ICM
Collector Peak Current
2A
IB
Base Current
1A
Ptot
Total Dissipation @ Tamb = 25°C
1W
Ptot
Total Dissipation
10W
Tstg
Storage Temperature
-65 to 175°C
Tj
Max Operating Junction Temperature
175°C
0.89
(0.035)max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5320X-QR | 1200 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5320 | 2000 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5321 | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5321 | 2 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 2N5321 | Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5321 | 功能描述:两极晶体管 - BJT TO-39 NPN GEN PUR SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5322 | 功能描述:两极晶体管 - BJT PNP 75V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5322_03 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:HIGH SPEED MEDIUM VOLTAGE SWITCHES |
| 2N5322_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5322MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-39 |
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