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参数资料
| 型号： | 2N5401 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/2页 |
| 文件大小： | 21K |
| 代理商： | 2N5401 |
DS11205 Rev. G-3
1 of 2
2N5401
2N5401
PNP GENERAL PURPOSE TRANSISTOR
High Collector-Emitter Breakdown Voltage
Epitaxial Planar Die Construction
Available in Both Through-Hole and Surface
Mount Packages
Designed for General Purpose Amplifier and
Switch Applications
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
2N5401
Unit
Collector to Emitter Voltage
VCEO
-150
V
Collector to Base Voltage
VCBO
-160
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current
IC
200
mA
Total Device Dissipation
(Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
200
K/W
Thermal Resistance, Junction to Case
RqJC
83.3
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Features
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
Weight: 0.18 grams (approx.)
Mechanical Data
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5401 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,412 | 功能描述:两极晶体管 - BJT TRANS HV BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| 2N5401/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier Transistors PNP Silicon |
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