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参数资料
| 型号： | 2N5401 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/2页 |
| 文件大小： | 21K |
| 代理商： | 2N5401 |
DS11205 Rev. G-3
2 of 2
2N5401
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector to Emitter Breakdown Voltage
(Note 2)
V(BR)CEO
-150
V
IC = -1.0mA, IB = 0
Collector to Base Breakdown Voltage
V(BR)CBO
-160
V
IC = -100
A, IE = 0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
A, IC = 0
Emitter Cutoff Current
IEBO
-50
nA
VEB = -3.0V, IC = 0
Collector Cutoff Current
ICBO
-50
nA
A
VCB = -120V, IE = 0
VCB = -120V, TA = 100
°C
IE = 0
DC Pulse Current Gain
(Note 2)
hFE
50
60
50
240
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
(Note 2)
VCE(SAT)
-0.20
-0.50
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
(Note 2)
VBE(SAT)
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cob
6.0
pF
VCB = -10V, IE = 0,
f = 1.0MHz
Current Gain Bandwidth Product
fT
100
300
MHz
IC = -10 mA, VCE = -10V,
f = 100MHz
Noise Figure
NF
—
8.0
dB
IC = -250 A, VCE = -5.0 V,
f = 10 Hz to 15.7 kHz, RS =
1.0 k
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5401 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,412 | 功能描述:两极晶体管 - BJT TRANS HV BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| 2N5401/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier Transistors PNP Silicon |
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