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参数资料
| 型号： | 2N5401 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 106K |
| 代理商： | 2N5401 |
2N5400 / 2N5401
2N5400 / 2N5401
PNP
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
Version 2006-06-17
Dimensions - Mae [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N5400
2N5401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCE0
120 V
150 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
130 V
160 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5 V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
600 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1 A
Base current – Basisstrom
- IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhltnis 2)
- IC = 1 mA,
- VCE = 5 V
- IC = 10 mA,
- VCE = 5 V
- IC = 50 mA,
- VCE = 5 V
2N5400
hFE
30
40
–
180
–
- IC = 1 mA,
- VCE = 5 V
- IC = 10 mA,
- VCE = 5 V
- IC = 50 mA,
- VCE = 5 V
2N5401
hFE
50
60
50
–
240
–
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 100 V, (E open)
- VCB = 120 V, (E open)
2N5400
2N5401
- ICBO
–
100 nA
50 nA
- VCB = 100 V, Tj = 100°C, (E open)
- VCB = 120 V, Tj = 100°C, (E open)
2N5400
2N5401
- ICBO
–
100 A
50 A
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
Diotec Semiconductor AG
http://www.diotec.com/
1
16
18
9
2 x 2.54
C BE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5401 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401,412 | 功能描述:两极晶体管 - BJT TRANS HV BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| 2N5401/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier Transistors PNP Silicon |
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