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参数资料
| 型号： | 2N5433 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最大导通电阻7Ω的N沟道结型场效应管) |
| 中文描述： | N沟道场效应（最大导通电阻7Ω的?沟道结型场效应管） |
| 文件页数： | 1/5页 |
| 文件大小： | 62K |
| 代理商： | 2N5433 |
2N5432/5433/5434
Siliconix
S-52424—Rev. E, 14-Apr-97
1
N-Channel JFETs
Product Summary
Part Number
V
GS(off)
(V)
r
DS(on)
Max ( )
I
D(off)
Typ (pA)
t
ON
Typ (ns)
2N5432
–4 to –10
5
10
2.5
2N5433
–3 to –9
7
10
2.5
2N5434
–1 to –4
10
10
2.5
Features
Low On-Resistance: 2N5432 <5
Fast Switching—t
ON
: 2.5 ns
High Off-Isolation—I
D(off)
: 10 pA
Low Capacitance: 11 pF
Low Insertion Loss
Benefits
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Applications
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Description
The 2N5432/5433/5434 are suitable for high-performance
analog switching and amplifier applications. Breakdown
voltage characteristics, low on-resistance, and very fast
switching make these devices are ideal for a wide range of
applications.
The hermetically-sealed TO-206AC (TO-52) package is
suitable for processing per MIL-S-19500 (see Military
Information). For similar products in TO-236 (SOT-23) or
TO-226AA (TO-92) packages, see the J/SST108 series data
sheet.
G and Case
TO-206AC
(TO-52)
D
S
Top View
1
2
3
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
–25 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . .
–65 to 200 C
Operating Junction Temperature
Power Dissipation
a
–55 to 150 C
300 mW
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.4 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70245.
相关PDF资料 |
PDF描述 |
|---|---|
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| 2N5484 | N-Channel JFET(最小栅源击穿电压-25V，最小漏极饱和电流1mA的N沟道结型场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5433-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-52 - Bulk |
| 2N5433-DIE | 制造商:Vishay Siliconix 功能描述: |
| 2N5433-E3 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434-2 | 功能描述:JFET FIELD EFFECT TRANS RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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