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参数资料
| 型号： | 2N5550RLRAG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | LEAD FREE, CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 84K |
| 代理商： | 2N5550RLRAG |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 4
1
Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
2N5550
2N5551
VCEO
140
160
Vdc
Collector Base Voltage
2N5550
2N5551
VCBO
160
180
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
200
°C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO92
CASE 29
STYLE 1
1 2
3
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N
555x
AYWW
G
x = 0 or 1
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbFree Package
(Note: Microdot may be in either location)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5550RLRP | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5550RLRPG | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5550S | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N5550S_99 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N5550TA | 功能描述:两极晶体管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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