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参数资料
| 型号： | 2N5565-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | LEAD FREE, HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 3/6页 |
| 文件大小： | 106K |
| 代理商： | 2N5565-E3 |
2N5564/5565/5566
Vishay Siliconix
Document Number: 70254
S-50150—Rev. E, 24-Jan-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
10
0
200
160
0
rDS
IDSS
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 15 V, VGS = 0
100
0
1
10
100
VGS(off) = 2 V
TA = 25_C
VGS(off) Gate-Source Cutoff Voltage (V)
ID Drain Current (mA)
80
60
40
20
80
60
40
20
2
4
6
8
120
80
40
Turn-On Switching
5
0
10
4
3
2
1
0
tr
Switching
T
ime
(ns)
td(on) @
ID = 3 mA
td(on) @
ID = 12 mA
tr approximately independent of ID
VDG = 5 V, RG = 50 W
VGS(L) = 10 V
VGS(off) Gate-Source Cutoff Voltage (V)
2
4
6
8
Turn-Off Switching
30
010
24
18
12
6
0
VGS(off) = 2 V
td(off)
td(off) independent of device VGS(off)
VDG = 5 V, VGS(L) = 10 V
ID Drain Current (mA)
24
6
8
Switching
T
ime
(ns)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
0
2
10
500
200
0
g
fs
Forward
Transconductance
(mS)
gfs
gos
gfs and gos @ VDS = 15 V
VGS = 0 V, f = 1 kHz
VGS(off) Gate-Source Cutoff Voltage (V)
40
30
20
10
4
6
8
400
200
100
160
120
On-Resistance vs. Temperature
200
55
25
125
0
15
85
ID = 1 mA
rDS changes 0.7%/_C
VGS(off) = 2 V
TA Temperature (_C)
80
40
35
5
45
65
105
tf
r DS(on)
Drain-Source
On-Resistance
(
)
W
r DS(on)
Drain-Source
On-Resistance
(
)
W
r DS(on)
Drain-Source
On-Resistance
(
)
W
Saturation
Drain
Current
(mA)
IDSS
S)
g
os
Output
Conductance
(
m
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相关代理商/技术参数 |
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|---|---|
| 2N5566 | 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5566-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 6PIN TO-71 - Bulk |
| 2N5566-E3 | 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5567 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:TRIACS BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5568 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BIDIRECTIONAL TRIODE THYRISTORS |
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