参数资料
型号: 2N5565-E3
厂商: VISHAY SILICONIX
元件分类: 小信号晶体管
英文描述: 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
封装: LEAD FREE, HERMETIC SEALED PACKAGE-6
文件页数: 4/6页
文件大小: 106K
代理商: 2N5565-E3
2N5564/5565/5566
Vishay Siliconix
www.vishay.com
4
Document Number: 70254
S-50150—Rev. E, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
40
32
24
16
8
0
0.4
0.8
1.2
1.6
2
VDS = 15 V
Drain
Current
(mA)
I D
VGS Gate-Source Voltage (V)
TA = 55_C
25_C
125_C
Transfer Characteristics
14
12
10
8
6
4
2
0
4
8
12
16
20
Output Characteristics
VDS Drain-Source Voltage (V)
Drain
Current
(mA)
I D
VGS(off) = 1.5 V
VGS = 0 V
0.1 V
0.2 V
0.3 V
0.4 V
0.5 V
0.6 V
0.7 V
Output Characteristics
VDS Drain-Source Voltage (V)
Drain
Current
(mA)
I D
5
01
0.8
0.6
0.4
0.2
4
3
2
0
1
VGS(off) = 1.5 V
0.2 V
0.3 V
0.4 V
0.5 V
0.6 V
0.7 V
0.8 V
0.9 V
Capacitance vs. Gate-Source Voltage
30
20
24
18
12
6
0
Capacitance
(pF)
f = 1 MHz
VDS = 0 V
Ciss
Crss
0
VGS Gate-Source Voltage (V)
4
8
12
16
Gate Leakage Current
030
Gate
Leakage
I G
TA = 125_C
TA = 25_C
1 mA
IGSS @ 25_C
ID = 10 mA
Common-Gate Input Admittance
100
10
1
0.1
100
1000
200
500
(mS)
gig
big
VDG = 15 V
ID = 10 mA
TA = 25_C
VDG Drain-Gate Voltage (V)
f Frequency (MHz)
IGSS @ 25_C
10 mA
1 mA
6
121824
IG(on) @ ID
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
0.1 V
VGS(off) = 2 V
VGS = 0 V
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