参数资料
型号: 2N5681
厂商: STMICROELECTRONICS
元件分类: 小信号晶体管
英文描述: 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件页数: 1/4页
文件大小: 46K
代理商: 2N5681
2N5681
2N5682
SILICON NPN TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
NPN TRANSISTOR
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The 2N5681, 2N5682 are high voltage silicon
epitaxial planar NPN transistors in Jedec TO-39
metal case intended for use as drivers for high
power transistors in general purpose, amplifier
and switching applications.
The
2N5682
complementary
PNP
type
is
2N5680.
INTERNAL SCHEMATIC DIAGRAM
December 2000
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N5681
2N5682
VCBO
Collector-Base Voltage (IE = 0)
100
120
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
120
V
VEBO
Emitter-Base Voltage (IC = 0)
4
V
IC
Collector Current
1
A
IB
Base Current
0.5
A
Ptot
Total Dissipation at Tc
≤ 25 oC
10
W
Ptot
Total Dissipation at Tamb
≤ 50 oC
1W
Tstg
Storage Temperature
-65 to 200
oC
Tj
Max. Operating Junction Temperature
200
oC
1/4
相关PDF资料
PDF描述
2N5682 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5682 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5679 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5679 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5681 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
相关代理商/技术参数
参数描述
2N5681SMD 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN
2N5681SMD05 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT
2N5682 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5682 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR
2N5683 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:-50A; DC Current Gain hFE:15; Operating Temperature Min:-65C ;RoHS Compliant: Yes