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参数资料
| 型号： | 2N5681 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 2/4页 |
| 文件大小： | 46K |
| 代理商： | 2N5681 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
17.5
175
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
for 2N5681
VCE = 100 V
for 2N5682
VCE = 120 V
Tc = 150
oC
for 2N5681
VCE = 100 V
for 2N5682
VCE = 120 V
1
A
ICBO
Collector Cut-off
Current (IE = 0)
for 2N5681
VCB = 100 V
for 2N5682
VCB = 120 V
1
A
ICEO
Collector Cut-off
Current (IB = 0)
for 2N5681
VCB = 70 V
for 2N5682
VCB = 80 V
10
A
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 4 V
1
A
VCEO(sus)
Collector-Emitter
Sustaining Voltage
IC = 10 mA
for 2N5681
for 2N5682
100
120
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 250 mA
IB = 25 mA
IC = 500 mA
IB = 50 mA
IC = 1 A
IB = 200 mA
0.6
1
2
V
VBE
Base-Emitter Voltage
IC = 250 mA
VCE = 2 V
1
V
hFE
DC Current Gain
IC = 250 mA
VCE = 2 V
IC = 1 A
VCE = 2 V
40
5
150
hfe
Small Signal Current
Gain
IC = 0.2 A
VCE = 1.5 V
f = 1KHz
40
fT
Transition frequency
IC = 100 mA
VCE = 10 V
f =10MHz
30
MHz
CCBO
Collector Base
Capacitance
IE = 0
VCB = 20 V
f = 1MHz
50
pF
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
2N5681 / 2N5682
2/4
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5682 | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5682 | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5679 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5679 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5681 | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5681SMD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
| 2N5682 | 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5682 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5683 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:-50A; DC Current Gain hFE:15; Operating Temperature Min:-65C ;RoHS Compliant: Yes |
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