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参数资料
| 型号： | 2N5684 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件页数： | 1/6页 |
| 文件大小： | 270K |
| 代理商： | 2N5684 |
1
Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Power Transistors
. . . designed for use in high–power amplifier and switching circuit applications.
High Current Capability — IC Continuous = 50 Amperes.
DC Current Gain —
hFE = 15–60 @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5685
2N5684
2N5686
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
50
Adc
Base Current
IB
15
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
300
1.715
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.584
_C/W
(1) Indicates JEDEC Registered Data.
300
0
20
40
60
80
100
120
140
160
180
200
Figure 1. Power Derating
TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
250
150
100
50
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5684/D
Motorola, Inc. 1995
2N5684
2N5685
2N5686
*Motorola Preferred Device
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 VOLTS
300 WATTS
*
CASE 197A–05
TO–204AE
PNP
NPN
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 2N5686 | 50 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N5738.MOD | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5738 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5739 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5684/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High-Current Complementary Silicon Power Transistors |
| 2N5684_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
| 2N5684G | 功能描述:两极晶体管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5684G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| 2N5685 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N5685 GP BJTs 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
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