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参数资料
| 型号： | 2N5684 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件页数： | 4/6页 |
| 文件大小： | 270K |
| 代理商： | 2N5684 |
2N5684 2N5685 2N5686
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
500
0.5
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.7 1.0
2.0
5.0 7.0
10
20
50
70
30
20
10
100
50
h
FE
,DC
CURRENT
GAIN
TJ = +150°C
+ 25
°C
– 55
°C
7.0
200
300
VCE = 2.0 V
VCE = 10 V
3.0
30
PNP
2N5684
IC, COLLECTOR CURRENT (AMP)
h
FE
,DC
CURRENT
GAIN
TJ = +150°C
+ 25
°C
– 55
°C
VCE = 2.0 V
VCE = 10 V
NPN
2N5685, 2N5686
Figure 9. Collector Saturation Region
2.0
0.1
IB, BASE CURRENT (AMP)
0
0.2
1.0
2.0
5.0
10
0.8
0.4
IC = 10 A
TJ = 25°C
25 A
1.2
1.6
0.5
3.0
40 A
0.1
IB, BASE CURRENT (AMP)
0.2
1.0
2.0
5.0
10
IC = 10 A
TJ = 25°C
25 A
0.5
3.0
40 A
0.3
2.5
0.5
IC, COLLECTOR CURRENT (AMP)
0.7
1.0
2.0
3.0
5.0
10
20
50
2.0
1.5
1.0
0.5
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,VOL
TAGE
(VOL
TS)
Figure 10. “On” Voltages
30
VBE @ VCE = 2.0 V
7.0
2.0
0.5
IC, COLLECTOR CURRENT (AMP)
0.7
1.0
2.0
3.0
5.0
10
20
50
1.6
1.2
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,VOL
TAGE
(VOL
TS)
30
VBE @ VCE = 2.0 V
500
0.5
5.0
0.7 1.0
2.0
5.0 7.0
10
20
50
70
30
20
10
100
50
7.0
200
300
3.0
30
2.0
0
0.8
0.4
1.2
1.6
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5684/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High-Current Complementary Silicon Power Transistors |
| 2N5684_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
| 2N5684G | 功能描述:两极晶体管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5684G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| 2N5685 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N5685 GP BJTs 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
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