参数资料
型号: 2N5686
厂商: MICROSEMI CORP
元件分类: 功率晶体管
英文描述: 50 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件页数: 2/2页
文件大小: 30K
代理商: 2N5686
2SK2137
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
RDS(on)
1.7
2.4
VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
1.0
VDS = 10 V, ID = 2.0 A
Drain Leakage Current
IDSS
100
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
550
VDS = 10 V
Output Capacitance
Coss
130
VGS = 0
Reverse Transfer Capacitance
Crss
25
f = 1 MHz
Turn-On Delay Time
td(on)
11
ID = 2.0 A
Rise Time
tr
6
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
45
VDD = 150 V
Fall Time
tf
7
RG = 10
R
L = 75
Total Gate Charge
QG
20
ID = 4.0 A
Gate to Source Charge
QGS
4
VDD = 480 V
Gate to Drain Charge
QGD
10
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.0
IF = 4.0 A, VGS = 0
Reverse Recovery Time
trr
320
IF = 4.0 A, VGS = 0
Reverse Recovery Charge
Qrr
1.2
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
ns
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
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