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参数资料
| 型号： | 2N5758 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 1/6页 |
| 文件大小： | 183K |
| 代理商： | 2N5758 |
1
Motorola Bipolar Power Transistor Device Data
High-Voltage High-Power
Silicon Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
DC Current Gain @ IC = 3.0 Adc —
hFE = 25 (Min)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5758
Unit
Collector–Emitter Voltage
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak
IC
6.0
10
Adc
Base Current
IB
4.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
150
0.857
Watts
W/
_C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.17
_C/W
(1) Indicates JEDEC Registered Data.
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
120
80
40
20
Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed.
140
100
60
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5758/D
2N5745
(See 2N4398)
Motorola, Inc. 1995
2N5758
6 AMPERE
POWER TRANSISTOR
NPN SILICON
100 – 140 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5759 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 6A 3PIN TO-3 - Bulk |
| 2N575A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 25A I(C) | STR-1/4 |
| 2N5760 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 6A 3PIN TO-3 - Bulk |
| 2N5764 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN POWER BJT |
| 2N5769 | 功能描述:两极晶体管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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