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参数资料
| 型号： | 2N5758 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 3/6页 |
| 文件大小： | 183K |
| 代理商： | 2N5758 |
2N5758
3
Motorola Bipolar Power Transistor Device Data
Figure 3. Turn–On Time
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
1.0
3.0
5.0
10
20
50
100
200
500
1000
θJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
Figure 4. Thermal Response
0.02
1.0
0.06
IC, COLLECTOR CURRENT (AMP)
0.5
0.2
0.1
0.05
0.1
0.2
0.4
0.6
2.0
6.0
VCC = 30 V
IC/IB = 10
VBE(off) = 5.0 V
TJ = 25°C
0.07
t,
TIME
(
s)
tr
1.0
0.3
0.7
4.0
td
0.03
0.3
2.0
30
300
0.01
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
3.0
2.0
1.0
0.1
20
30
50
100
300
BONDING WIRE
LIMITED
THERMALLY LIMITED
@ TC = 25°C
SECOND BREAKDOWN LIMITED
200
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
CURVES APPLY BELOW RATED VCEO
0.3
0.2
70
TJ = 200°C
Figure 5. Active–Region Safe Operating Area
0.05 ms
0.1 ms
1.0 ms
0.5 ms
5.0 ms
2N5760
2N5758
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
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