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参数资料
| 型号： | 2N5805 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 375 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N5805 |
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2N5805 Information
Category Transistors
2N5805 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 375
V(BR)CBO (V) : 375
I(C) Max. (A) : 5.0
Absolute Max. Power Diss. (W) : 62#
Maxim um Operating Tem p (шC) : 200ю
I(CBO) Max. (A) : 5.0m
@V(CBO) (V) (Test Condition) : 340
V(CE)sat Max. (V) : 2.0
@I(C) (A) (Test Condition) : 5.0
@I(B) (A) (Test Condition) : 500m
h(FE) Min. Current gain. : 10
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 5.0
@V(CE) (V) (Test Condition) : 4.0
f(T) Min. (Hz) Transition Freq : 15M
@I(C) (A) (Test Condition) : 1.0
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e : 500n
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. : 3.5u
t(f) Max. (s) Fall tim e. : 2.0u
t(off) Max. (s) Off tim e :
Package Style : TO-3
Mounting Style : T
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