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参数资料
| 型号： | 2N5962D75Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/10页 |
| 文件大小： | 469K |
| 代理商： | 2N5962D75Z |
2N5962/
MMBT5962
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 5.0 mA, IB = 0
45
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
45
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
8.0
V
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 65
°C
2.0
50
nA
IEBO
Emitter Cutoff Current
VEB = 5.0 V, IC = 0
1.0
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 10
A
VCE = 5.0 V, IC = 100
A
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
450
500
550
600
1400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
0.2
V
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 5.0 V
4.0
pF
Ceb
Emitter-Base Capacitance
VEB = 0.5 V
6.0
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
600
1.0
200
NF
Noise Figure
VCE = 5.0 V, IC = 10
A,
RS = 10 k
, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100
A,
RS = 1.0 k
, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100
A,
RS = 10 k
, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100
A,
RS = 100 k
, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 10
A,
RS = 10 k
, f = 10 Hz -10 kHz
BW = 15.7 kHz
3.0
6.0
4.0
8.0
3.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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