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参数资料
| 型号： | 2N6037 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 221K |
| 代理商： | 2N6037 |
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Semiconductor Material:
Silicon
Part Number: 2N6037
2N6037
NPN m e dium po w e r darlingt o n t ransis t o r 4 A 4 0 V
In Stock 1621 Brand New Available from $ 5.26
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2N6037
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2N6037 NPN medium power darlington transistor 4A 40V 5.26 Transisto...
http://store.americanmicrosemiconductor.com/2n6037.html
1 of 1
4/13/2010 12:03 AM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6037ECB | 制造商:National Semiconductor 功能描述:2N6037 |
| 2N6038 | 功能描述:达林顿晶体管 NPN Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6038G | 功能描述:达林顿晶体管 4A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6039 | 功能描述:达林顿晶体管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6039G | 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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