参数资料
型号: 2N6039
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: PLASTIC PACKAGE-3
文件页数: 1/10页
文件大小: 382K
代理商: 2N6039
May 2009
Doc ID 5064 Rev 5
1/10
10
2N6036
2N6039
Complementary power Darlington transistors
Features
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Applications
Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
.
Figure 1.
Internal schematic diagram
SOT-32
3
2
1
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1.
Device summary
Order codes
Marking
Polarity
Package
Packaging
2N6036
NPN
SOT-32
Tube
2N6039
PNP
SOT-32
Tube
相关PDF资料
PDF描述
2N6039 4 A, NPN, Si, POWER TRANSISTOR, TO-126
2N6042 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
2N6043 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6044 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6050R1 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
相关代理商/技术参数
参数描述
2N6039G 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2N6040 功能描述:达林顿晶体管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2N6040/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Medium-Power Complementary Silicon Transistors
2N6040_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors
2N6040_07 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors