参数资料
型号: 2N6039
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: PLASTIC PACKAGE-3
文件页数: 8/10页
文件大小: 382K
代理商: 2N6039
2N6036, 2N6039
Package mechanical data
Doc ID 5064 Rev 5
7/10
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
相关PDF资料
PDF描述
2N6039 4 A, NPN, Si, POWER TRANSISTOR, TO-126
2N6042 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
2N6043 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6044 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6050R1 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
相关代理商/技术参数
参数描述
2N6039G 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2N6040 功能描述:达林顿晶体管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2N6040/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Medium-Power Complementary Silicon Transistors
2N6040_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors
2N6040_07 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors