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参数资料
| 型号： | 2N6039 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 2/6页 |
| 文件大小： | 243K |
| 代理商： | 2N6039 |
2N6035 2N6036 2N6038 2N6039
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6035, 2N6038
2N6036, 2N6039
VCEO(sus)
60
80
—
Vdc
Collector–Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6035, 2N6038
(VCE = 80 Vdc, IB = 0)
2N6036, 2N6039
ICEO
—
100
A
Collector–Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6036, 2N6039
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6036, 2N6039
ICEX
—
100
500
A
Collector–Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N6035, 2N6038
(VCB = 80 Vdc, IE = 0)
2N6036, 2N6039
ICBO
—
0.5
mAdc
Emitter–Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
500
750
100
—
15,000
—
—
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
VCE(sat)
—
2.0
3.0
Vdc
Base–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc)
VBE(sat)
—
4.0
Vdc
Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current–Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe|
25
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6035, 2N6036
2N6038, 2N6039
Cob
—
200
100
pF
* Indicates JEDEC Registered Data.
Figure 2. Switching Times Test Circuit
4.0
0.04
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(
s)
2.0
1.0
0.6
0.2
0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.4
0.8
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+ 8.0 V
V1
approx
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
– 30 V
RC
TUT
≈ 8.0 k
≈ 60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6035 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 2N6038 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6039 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6295 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6044LEADFREE | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6039G | 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6040 | 功能描述:达林顿晶体管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6040/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
| 2N6040_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors |
| 2N6040_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
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