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参数资料
| 型号： | 2N6035 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 1/6页 |
| 文件大小： | 243K |
| 代理商： | 2N6035 |
1
Motorola Bipolar Power Transistor Device Data
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038
VCEO(sus) = 80 Vdc (Min) — 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with Built–In Base–Emitter Resistors to Limit
Leakage Multiplication
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6035
2N6038
2N6036
2N6039
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
4.0
8.0
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
40
0.32
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.5
0.012
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
3.12
_C/W
Thermal Resistance, Junction to Ambient
θJA
83.3
_C/W
(1) Indicates JEDEC Registered Data.
40
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
20
10
30
140
TC
4.0
0
2.0
1.0
3.0
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6035/D
2N6030 thru 2N6031
(See 2N5630)
Motorola, Inc. 1995
2N6035
2N6036
2N6038
2N6039
*Motorola Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
*
CASE 77–08
TO–225AA TYPE
PNP
NPN
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6038 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6039 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6295 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6044LEADFREE | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6042LEADFREE | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6035/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Darlington Silicon Power Transistors |
| 2N6035_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
| 2N6035_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
| 2N6035G | 功能描述:达林顿晶体管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6036 | 功能描述:达林顿晶体管 PNP Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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