- 您现在的位置：买卖IC网 > PDF目录30453 > 2N6035 (MOTOROLA INC) 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA PDF资料下载
参数资料
| 型号： | 2N6035 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 3/6页 |
| 文件大小： | 243K |
| 代理商： | 2N6035 |
2N6035 2N6036 2N6038 2N6039
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE,
NORMALIZED
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θJC(t) = r(t) θJC
θJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.03
0.3
3.0
30
300
ACTIVE–REGION SAFE–OPERATING AREA
1.0
5.0
Figure 5. 2N6035, 2N6036
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
70
1.0
I C
,COLLECT
OR
CURRENT
(AMP)
TJ = 150°C
dc
1.0 ms
100
s
Figure 6. 2N6038, 2N6039
0.7
0.5
0.2
20
2N6036
2N6035
0.3
1.0
5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
70
1.0
I C
,COLLECT
OR
CURRENT
(AMP)
0.7
0.5
0.2
20
2N6039
2N6038
0.3
5.0 ms
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
s
1.0 ms
5.0 ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
TJ = 150°C
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0
2.0
40
4.0
0.06 0.1
0.2
C,
CAP
ACIT
ANCE
(pF)
100
50
30
TC = 25°C
Cib
70
Cob
PNP
NPN
Figure 7. Capacitance
20
6.0
10
20
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6038 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6039 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6295 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6044LEADFREE | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6042LEADFREE | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6035/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Darlington Silicon Power Transistors |
| 2N6035_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
| 2N6035_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Darlington Complementary Silicon Power Transistors |
| 2N6035G | 功能描述:达林顿晶体管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6036 | 功能描述:达林顿晶体管 PNP Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。