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参数资料
| 型号： | 2N6040LEADFREE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 260K |
| 代理商： | 2N6040LEADFREE |
2N6040
2N6041
2N6042
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6043
2N6044
2N6045
UNITS
Collector-Base Voltage
VCBO
60
80
100
V
Collector-Emitter Voltage
VCEO
60
80
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Base Current
IB
120
mA
Power Dissipation
PD
75
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJC
1.67
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=Rated VCBO
20
A
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V
20
A
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C
200
A
ICEO
VCE=Rated VCEO
20
A
IEBO
VEB=5.0V
2.0
mA
BVCEO
IC=100mA (2N6040, 2N6043)
60
V
BVCEO
IC=100mA (2N6041, 2N6044)
80
V
BVCEO
IC=100mA (2N6042, 2N6045)
100
V
VCE(SAT)
IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044)
2.0
V
VCE(SAT)
IC=3.0A, IB=12mA (2N6042, 2N6045)
2.0
V
VCE(SAT)
IC=8.0A, IB=80mA
4.0
V
VBE(SAT)
IC=8.0A, IB=80mA
4.5
V
VBE(ON)
VCE=4.0V, IC=4.0A
2.8
V
hFE
VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044)
1,000
20,000
hFE
VCE=4.0V, IC=3.0A (2N6042, 2N6045)
1,000
20,000
hFE
VCE=4.0V, IC=8.0A
100
2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (16-November 2009)
www.centr a lsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6050 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N5881 | 12 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6051 | 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6051 | 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6041 | 功能描述:达林顿晶体管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6041G | 制造商:ON Semiconductor 功能描述: |
| 2N6042 | 功能描述:达林顿晶体管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6042 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 100V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220 |
| 2N6042G | 功能描述:达林顿晶体管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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