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参数资料
| 型号： | 2N6058 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 190K |
| 代理商： | 2N6058 |
2N6052
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
20,000
0.2
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200
0.3
0.5
1.0
2.0
20
h
FE
,DC
CURRENT
GAIN
10
PNP
2N6052
NPN
2N6058, 2N6059
Figure 10. Collector Saturation Region
3.0
0.5
IB, BASE CURRENT (mA)
1.0
2.0
10
50
1.8
IC = 3.0 A
TJ = 25°C
6.0 A
2.2
2.6
5.0
3.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 11. “On” Voltages
VBE @ VCE = 3.0 V
2.0
10,000
TJ = 150°C
25
°C
–55
°C
20
IC, COLLECTOR CURRENT (AMP)
h
FE
,DC
CURRENT
GAIN
VCE = 3.0 V
TJ = 150°C
25
°C
–55
°C
1.4
9.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
TJ = 25°C
V
,VOL
TAGE
(VOL
TS)
VBE @ VCE = 3.0 V
5000
3000
2000
1000
500
300
3.0
5.0
VCE = 3.0 V
40,000
0.2
400
0.3
0.5
1.0
2.0
20
10
20,000
10,000
6,000
4,000
2,000
1,000
600
3.0
5.0
3.0
1.0
1.8
2.2
2.6
1.4
10
5.0
3.0
0.2 0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
2.0
10
5.0
30
12 A
IC = 3.0 A
6.0 A
9.0 A
12 A
0.5
1.0
2.0
10
50
5.0
20
3.0
30
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6053-JQR-BR1 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6053-JQR-B | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6058 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6058JANTX | 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 12A 3-Pin(2+Tab) TO-3 |
| 2N6058JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N6059 | 功能描述:达林顿晶体管 NPN Darlington LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6059 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR TO-3 |
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