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参数资料
| 型号： | 2N6193ALCC4E4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALEC, CERAMIC, LCC4-15 |
| 文件页数： | 2/2页 |
| 文件大小： | 17K |
| 代理商： | 2N6193ALCC4E4 |
Data Sheet D10198EJ5V0DS
2
2SD1615, 1615A
TYPICAL CHARACTERISTICS (TA = 25°C)
When
mounted
on
cer
amic
substr
ate
of
16
cm
2×
0.7
mm
TA – Ambient Temperature – C
0
40
80
120
160
200
2.5
2.0
1.5
1.0
0.5
P
T
–
T
otal
P
o
w
er
Dissipation
–
W
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
80
60
40
20
02
4
6
8
10
300 A
μ
250 A
μ
200 A
μ
150 A
μ
100 A
μ
IB = 50 A
μ
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE – Collector to Emitter Voltage – V
IC
–
Collector
Current
–
mA
1000
500
200
100
50
20
10
5
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
IC – Collector Current – A
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
EF
–
DC
Current
Gain
VCE = 2.0 V
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
IB = 0.5 mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
VCE(sat) – Collector Saturation Voltage – V
IC
–
Collector
Current
–
A
2
1
0.5
0.2
0.1
0.05
0.02
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
IC – Collector Current – A
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
CE(sat)
–
Collector
Satur
ation
V
oltage
–
V
BE(sat)
–
Base
Satur
ation
V
oltage
–
V
3.5
mA
4.0
mA
5.0 mA
4.5 mA
IC = 20IB
V
CE(sat)
VBE(sat)
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
1 pulse
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
1
2
5
10
20
50
100
VCE – Collector to Emitter Voltage – V
IC
–
Collector
Current
–
A
2SD1615A
PW=1
ms
10
ms
200
ms
2SD1615
DC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6193J | 制造商:Motorola Inc 功能描述: |
| 2N6193JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
| 2N6193JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
| 2N6193JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
| 2N6193LCC4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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