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参数资料
| 型号： | 2N6427RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 244K |
| 代理商： | 2N6427RLRA |
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 2
116
Publication Order Number:
2N6426/D
2N6426*, 2N6427
Preferred Device
Darlington Transistors
NPN Silicon
Features
PbFree Packages are Available**
Device Marking: Device Type, e.g., 2N6426, Date Code
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
40
Vdc
Emitter Base Voltage
VEBO
12
Vdc
Collector Current Continuous
IC
500
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
RqJA
200
°C/W
Thermal Resistance,
JunctiontoCase
RqJC
83.3
°C/W
**For additional information on our PbFree strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO92
CASE 29
STYLE 1
*Preferred devices are recommended choices for future
use and best overall value.
MARKING
DIAGRAM
2N
642x
YWW
See detailed ordering and shipping information in the package
dimensions section on page 120 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
1 2
3
642x
Specific Device Code
Y
= Year
WW
= Work Week
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6428 | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6433 | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N6437 | 25 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6438 | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6438.MODR1 | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6427RLRAG | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6428 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428ABU | 功能描述:两极晶体管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6428ATA | 功能描述:两极晶体管 - BJT NPN 50V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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