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| 型号： | 2N6427RLRM |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 188K |
| 代理商： | 2N6427RLRM |
2N6426 2N6427
http://onsemi.com
93
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 500 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
hFE
20,000
10,000
30,000
20,000
14,000
—
200,000
100,000
300,000
200,000
140,000
—
Collector–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
VCE(sat)
—
0.71
0.9
1.2
1.5
Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
—
1.52
2.0
Vdc
Base–Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
1.24
1.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
5.4
7.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
10
15
pF
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hie
100
50
—
2000
1000
k
Small–Signal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N6426
2N6427
hfe
20,000
10,000
—
Current–Gain — High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2N6426
2N6427
|hfe|
1.5
1.3
2.4
—
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
—
1000
mmhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
NF
—
3.0
10
dB
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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| 2N6428ATA_Q | 功能描述:两极晶体管 - BJT NPN 50V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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