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参数资料
| 型号： | 2N6427RLRP |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 188K |
| 代理商： | 2N6427RLRP |
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
40
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
—
1.0
mAdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
—
50
nAdc
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev.1
92
Publication Order Number:
2N6426/D
2N6426
2N6427
*ON Semiconductor Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
*
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1
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| 2N6428ATA | 功能描述:两极晶体管 - BJT NPN 50V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6428ATA_Q | 功能描述:两极晶体管 - BJT NPN 50V 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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