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参数资料
| 型号： | 2N6438-JQR-BR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 35K |
| 代理商： | 2N6438-JQR-BR1 |
2N6436
2N6437
2N6438
Document Number 3252
Issue 3
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
DESCRIPTION
Designed for use in Industrial - Military
Power Amplifier and Switching Circuit
Applications
ABSOLUTE MAXIMUM RATINGS(T
CASE = 25°c unless otherwise stated)
HIGH POWER PNP
SILICON TRANSISTORS
VCB
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEB
Emitter – Base Voltage
IC
Collector Current Continuous
Peak
IB
Base Current
PD
Total Device Dissipation at Tcase = 25°C
Derate above 25°C
Tstg,Tj
Operating and Storage Temperature Range
6.0V
25A
50A
10A
140W
0.8W/°C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO-3 Package (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Case – Collector
2N6436
2N6437
2N6438
100
80
120
100
140
120
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6437 | 25 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6439 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 2N6449 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-39 |
| 2N6454 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 2N6454 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6439 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| 2N6439MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 2N6441 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6442 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6443 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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