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参数资料
| 型号： | 2N6498AKAK |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 12/61页 |
| 文件大小： | 366K |
| 代理商： | 2N6498AKAK |
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2N6497 2N6498
3–137
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0)
2N6497
2N6498
VCEO(sus)
250
300
—
—
Vdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)
2N6497
(VCE = 400 Vdc, VBE(off) = 1.5 Vdc)
2N6498
(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
2N6497
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
2N6498
ICEX
—
—
1.0
10
mAdc
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
—
—
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
hFE
10
3.0
—
75
—
—
Collector–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
2N6497
2N6498
(IC = 5.0 Adc, IB = 2.0 Adc)
All Devices
VCE(sat)
—
—
1.0
1.25
5.0
Vdc
Base–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VBE(sat)
—
—
1.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
5.0
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
—
150
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
tr
—
0.4
1.0
s
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
ts
—
1.4
2.5
s
Fall Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
tf
—
0.45
1.0
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
Figure 1. Switching Time Test Circuit
1.0
Figure 2. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.05
5.0
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
1.0
0.1
2.0
+ 11 V
0
SCOPE
RB [ 20
– 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
– 9.0 V
D1
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
+ 125 V
RC [ 50
tr
td @ VBE(off) = 5.0 V
t,TIME
(
s)
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07
3.0
0.3
0.2
0.5 0.7
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|---|---|
| 2N6497BVBV | 5 A, 250 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6499 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 350V TO-220 制造商:SPC Multicomp 功能描述:TRANSISTORNPN5A350VTO220 制造商:SPC Multicomp 功能描述:TRANSISTOR,NPN,5A,350V,TO220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:80W; DC Collector Current:5A; DC Current Gain hFE:75; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N65 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
| 2N65_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
| 2N650 | 制造商:Motorola Inc 功能描述: |
| 2N6500 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 90V 4A 2PIN TO-66 - Bulk 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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