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参数资料
| 型号： | 2N6517ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 180K |
| 代理商： | 2N6517ZL1 |
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
2N6515
2N6517
2N6520
Unit
Collector–Emitter Voltage
VCEO
250
350
Vdc
Collector–Base Voltage
VCBO
250
350
Vdc
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
6.0
5.0
Vdc
Base Current
IB
250
mAdc
Collector Current –
Continuous
IC
500
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage
Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
V(BR)CEO
250
350
–
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0 )
2N6515
2N6517, 2N6520
V(BR)CBO
250
350
–
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
2N6515, 2N6517
2N6520
V(BR)EBO
6.0
5.0
–
Vdc
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
97
Publication Order Number:
2N6515/D
NPN
2N6515
2N6517
PNP
2N6520
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6518 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N6518BU | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6518TA | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6518TA_Q | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6519 | 制造商:n/a 功能描述:2N6519 TO92 N9H1C |
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