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参数资料
| 型号： | 2N6520ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 180K |
| 代理商： | 2N6520ZL1 |
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
98
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
–
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6520
IEBO
–
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
hFE
35
20
50
30
50
30
45
20
25
15
–
300
200
220
200
–
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
–
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
–
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
–
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT
40
200
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
–
6.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6520
Ceb
–
80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
–
200
s
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
–
3.5
s
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
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