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参数资料
| 型号： | 2N6520ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 180K |
| 代理商： | 2N6520ZL1 |
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
102
Figure 16. Switching Time Test Circuit
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
10k
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
t, TIME (ms)
Figure 17. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
I C
,COLLECTOR
CURRENT
(mA)
0.5 1.0
2.0
5.0
10
20
50 100 200
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 18. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
t1
1/f
DUTY CYCLE + t1 f +
t1
tP
PEAK PULSE POWER = PP
TA = 25°C
1.0 ms
10 s
TC = 25°C
100 s
100 ms
+10.8 V
-9.2 V
+VCC
2.2 k
20 k
50
50 SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
-1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH ≈ 100 s
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
ZθJC(t) = r(t) RθJC TJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) RθJA TJ(pk) - TA = P(pk) ZθJA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6517, 2N6520
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