参数资料
型号: 2N6660-JQR-B
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
封装: HERMETIC SEALED, METAL, TO-39, 3 PIN
文件页数: 1/3页
文件大小: 87K
代理商: 2N6660-JQR-B
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
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Document Number 8263
Issue 2
Page 1 of 3
2N6660
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM
Pulsed Drain Current
(1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ
Operating Temperature Range
-65 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
25
°C/W
RθJA
Thermal Resistance, Junction To Ambient
172
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相关PDF资料
PDF描述
2N6660C4A-JQRS.XRAY 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N6660C4A-JQRS.CVP 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N6660C4A-JQRS.SEM 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N6660C4A 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N6660C4A-JQRS.RAD 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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