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参数资料
| 型号： | 2N6660C4A-JQRS.CVB |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED PACKAGE-18 |
| 文件页数： | 1/4页 |
| 文件大小： | 236K |
| 代理商： | 2N6660C4A-JQRS.CVB |
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8382
Issue 1
Page 1 of 4
2N6660C4
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Surface Mounted Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM
Pulsed Drain Current
(1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
700mW
De-rate TA > 25°C
5.6mW/°C
TJ
Operating Temperature Range
-65 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
25
°C/W
RθJA
Thermal Resistance, Junction To Ambient
178.5
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6660C4A-JQRS.GRPB | 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N6660CSM4 | 1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 2N6660 | 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6661.MOD | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661B-1 | 4 ohm, Si, POWER, FET, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6660CSM4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6660CSM4_0809 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6660-E3 | 功能描述:MOSFET 60V 0.99A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6660-E3 | 制造商:Vishay Siliconix 功能描述:N CH MOSFET 60V 1.1A TO-205AD |
| 2N6660JANTX | 制造商:Vishay Semiconductors 功能描述: |
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