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参数资料
| 型号： | 2N6661.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 76K |
| 代理商： | 2N6661.MOD |
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
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Website: http://www.semelab-tt.com
Document Number 3092
Issue 5
Page 1 of 3
2N6661
VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
90V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
0.9A
IDM
Pulsed Drain Current
(1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
25
°C/W
RθJA
Thermal Resistance, Junction To Ambient
172
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6661B-1 | 4 ohm, Si, POWER, FET, TO-205AD |
| 2N6661B | Si, POWER, FET, TO-205AD |
| 2N6661CSM4-JQR-BG4 | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 2N6661CSM4-JQR-AG4 | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 2N6661CSM4-QR-B | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
相关代理商/技术参数 |
参数描述 |
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| 2N6666 | 功能描述:两极晶体管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| 2N6667_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2N6667_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Silicon Power Transistors |
| 2N6667G | 功能描述:达林顿晶体管 10A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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