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参数资料
| 型号： | 2N6661DCSM |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 900 mA, 90 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CERAMIC, LCC2-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 36K |
| 代理商： | 2N6661DCSM |
2N6661DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8874, ISSUE 1
FEATURES
Faster switching
Low Ciss
Integral Source-Drain Diode
High Input Impedance and High Gain
DESCRIPTION
These Dual enhancement-mode (normally-off) vertical DMOS
FETs are ideally suited to a wide range of switching and
amplifying applications where high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
High Reliability Screening options are available.
DUAL N–CHANNEL
ENHANCEMENT MODE
MOSFET
VDSS
90V
ID
0.9A
RDS(on)
4.0
CERAMIC LCC2 PACKAGE
(Underside View)
PAD 1 – DRAIN 1
PAD 4 – DRAIN 2
PAD 2 – GATE 1
PAD 5 – SOURCE 2
PAD 3 – GATE 2
PAD 6 – SOURCE 1
1
2
6
3
4
5
2
.5
4
±
0
.1
3
(0
.1
0
±
0
.0
0
5
)
0
.6
4
±
0
.0
6
(0
.0
2
5
±
0
.0
0
3
)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4
.3
2
±
0
.1
3
(0
.1
7
0
±
0
.0
0
5
)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS Each Side - T
CASE = 25°C unless otherwise stated
VDS
Drain - Source Voltage
90V
ID
Drain Current
- Continuous (TC = 25°C)
0.9A
- Continuous (TC = 100°C)
0.7A
IDM
Drain Current
- Pulsed (Note 1)
3A
VGS
Gate - Source Voltage
±20V
Ptot(1)
Total Power Dissipation at Tmb ≤ 25°C
6.25W
De-rate Linearly above 25°C
0.050W/°C
Ptot(2)
Total Power Dissipation at Tamb ≤ 25°C
0.5W
Tj,Tstg
Operating and Storage Junction Temperature Range
-55 to +150°C
THERMAL DATA
Rthj-mb
Thermal Resistance Junction – Mounting base
Max
20
°C/W
Rthj-amb
Thermal Resistance Junction - Ambient
Max
250
°C/W
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 1.46mH, I AS = 48A, VDD = 50V, RG = 25 ,
3) Pulse Test: Pulse Width ≤ 380S, Duty Cycle , δ 2%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6661-E3 | 功能描述:MOSFET 90V 0.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
| 2N6661JANTXV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
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