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参数资料
| 型号： | 2N6661DCSM |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 900 mA, 90 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CERAMIC, LCC2-6 |
| 文件页数： | 2/2页 |
| 文件大小： | 36K |
| 代理商： | 2N6661DCSM |
2N6661DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8874, ISSUE 1
STATIC ELECTRICAL RATINGS (Each Side - T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
Max.
Unit
V(BR)DSS
Drain – Source Breakdown Voltage
VGS = 0V
ID = 1.0A
90
-
VDS = VGS
ID = 1.0mA
0.8
-
2
TC = 125°C
0.3
-
VGS(th)
Gate – Source threshold Voltage
TC = -55°C
-
2.5
V
VGS = ±20V
VDS = 0V
-
±100
IGSS
Gate – Source Leakage Current
TC = 125°C
-
±500
nA
VDS = 72V
VGS = 0V
-
1.0
IDSS
Zero Gate Voltage Drain Current
TC = 125°C
-
100
A
ID(on)
On – State Drain Current (note 3)
VDS = 15V
VGS = 10V
1.5
-
A
VGS = 5V
ID = 0.3A
-
5.3
VGS = 10V
ID = 1.0A
-
4
RDS(on)
Drain – Source On Resistance
(note 3)
TC = 125°C
-
7.5
VGS = 5V
ID = 0.3A
-
1.6
VGS = 10V
ID = 1.0A
-
4
VDS(on)
Drain – Source On Voltage (note 3)
TC = 125°C
-
7.5
V
gFS
Forward Transconductance (Note 3)
VDS = 7.5V
ID = 0.475A
170
-
ms
VSD
Diode Forward Voltage (Note 3)
VGS = 0V
Is = 0.86A
0.7
-
1.4
V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
-
50
-
Coss
Output Capacitance
-
40
-
Crss
Reverse Transfer Capacitance
VDS = 25V
f = 1.0MHz
VGS = 0V
-
10
-
pF
Td(on)
Turn-On Delay
-
10
-
Td(off)
Turn-Off Delay Time
VDD = 25V
RGS = 50
ID = 1A
(Note 3)
-
10
-
ns
MATCHING CHARACTERISTICS FET1 to FET2
VGS(th) M
Gate – Source threshold Voltage
Matching
VDS = VGS
ID = 1mA
-
±25
mV
gFSM
Forward Transconductance Matching
(Note 3)
VDS = 7.5V
ID = 0.475A
-
50
ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6661-E3 | 功能描述:MOSFET 90V 0.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
| 2N6661JANTXV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
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