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参数资料
| 型号： | 2N6661M1A |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封装： | HERMETIC SEALED, METAL PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 724K |
| 代理商： | 2N6661M1A |
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Telephone +44 (0) 1455 556565
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Document Number 9006
Issue 1
Page 1 of 3
2N6661M1A
VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO-257AA Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
90V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM
Pulsed Drain Current
(1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
8.33W
De-rate TC > 25°C
66.7mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
15
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
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