参数资料
型号: 2N6667BA
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR
封装: TO-220AB, 3 PIN
文件页数: 12/61页
文件大小: 376K
代理商: 2N6667BA
2N6667 2N6668
3–148
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N6667
(IC = 200 mAdc, IB = 0)
2N6668
VCEO(sus)
60
80
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
2N6667
(VCE = 80 Vdc, IB = 0)
2N6668
ICEO
1
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6668
ICEX
300
3
Adc
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)
(IC = 10 Adc, VCE = 3 Vdc)
hFE
1000
100
20000
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
2
3
Vdc
Base–Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
|hfe|
20
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
200
pF
Small–Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)
hfe
1000
* Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
– 12 V
[ 8 k
[ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
t,TIME
(
s)
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4
2
1
3
0
60
140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
15
ts
tr
0.1
1
3
0.5
2
.td
0.5
2
7
0.3
0.7
3
7
10
相关PDF资料
PDF描述
2N6667AF 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6668AK 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6668AS 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6668AU 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6668BC 10 A, 80 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
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